2. equivalent circuit 2MBI400U2B-060 600v / 400a 2 in one-package features high speed switching voltage drive low inductance module structure applications inverter for motor drive ac and dc servo drive amplifier uninterruptible power supply industrial machines, such as welding machines maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specified) item zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance turn-on time turn-off time forward on voltage reverse recovery time lead resistance, terminal-chip* 3 i ces i ges v ge(th) v ce(sat) (terminal) v ce(sat) (chip) c ies t on t r t r(i) t off t f v f (terminal) v f (chip) t rr r lead ? ? 2.0 ? ? 400 6.2 6.7 7.7 ? 2.25 2.55 ? 2.50 ? ? 1.85 ? ? 2.10 ? ?29 ? ? 0.40 1.20 ? 0.22 0.60 ? 0.16 ? ? 0.48 1.20 ? 0.07 0.45 ? 2.00 2.35 ? 2.05 ? ? 1.60 ? ? 1.65 ? ? ? 0.35 ? 0.97 ? v ge =0v, v ce =600v v ce =0v, v ge =20v v ce =20v, i c =400ma v ge =15v, i c =400a v ce =10v, v ge =0v, f=1mhz v cc =300v i c =400a v ge =15v r g = 6.8 v ge =0v i f =400a i f =400a ma na v v nf s v s m electrical characteristics (at tj=25c unless otherwise specified) thermal resistance characteristics thermal resistance contact thermal resistance ? ? 0.10 ? ? 0.16 ? 0.025 ? igbt fwd with thermal compound c/w c/w c/w equivalent circuit schematic * 1 : all terminals should be connected together when isolation test will be done. * 2 : recommendable value : mounting 2.5 to 3.5nm(m5), terminal 2.5 to 3.5 nm(m5) symbols conditions characteristics unit min. typ. max. rth(j-c) rth(j-c) rth(c-f)* 4 igbt module u-series * 4 : this is the value which is defined mounting on the additional cooling fin with thermal compound. tj=25c tj=125c tj=25c tj=125c tj=25c tj=125c tj=25c tj=125c * 3 :biggest internal terminal resistance among arm. items symbols conditions characteristics unit min. typ. max. item symbol collector-emitter voltage v ces gate-emitter voltage v ges collector current i c i c p -i c -i c pulse collector power dissipation p c junction temperature t j storage temperature t stg isolation voltage between terminal and copper base *1 v iso screw torque mounting * 2 terminals * 2 rating 650 20 400 800 400 800 1250 +150 -40 to +125 2500 3.5 3.5 unit v v a w c vac nm conditions continuous 1ms 1 device ac:1min.
2MBI400U2B-060 igbt module characteristics (representative) vcc=300v, ic=400a, tj= 25c collector current vs. collector-emitter voltage (typ.) tj= 125c / chip capacitance vs. collector-emitter voltage (typ.) dynamic gate charge (typ.) collector current vs. collector-emitter voltage (typ.) tj= 25c / chip collector current vs. collector-emitter voltage (typ.) vge=15v / chip tj=25c / chip collector-emitter voltage vs. gate-emitter voltage (typ.) 0 200 400 600 800 1000 012345 collector current : ic [a] collector-emitter voltage : vce [v] vge=20v15v 12v 10v 8v 0 200 400 600 800 1000 012345 collector current : ic [a] collector-emitter voltage : vce [v] vge=20v15v 12v 10v 8v 0 200 400 600 800 1000 01234 collector current : ic [a] collector-emitter voltage : vce [v] tj=125c tj=25c 0.0 2.0 4.0 6.0 8.0 10.0 510152025 collector - emitter voltage : vce [ v ] gate - emitter voltage : vge [ v ] ic=800a ic=400a ic=200a 0.1 1.0 10.0 100.0 0102030 capacitance : cies, coes, cres [ nf ] collector-emitter voltage : vce [v] cies coes cres 0 400 800 1200 1600 collector-emitter voltage : vce [ 100v/div ] gate - emitter voltage : vge [ 5v/div ] gate charge : qg [ nc ] vge vce
2MBI400U2B-060 igbt module switching loss vs. collector current (typ.) vcc=300v, vge=15v, rg=6.8 switching loss vs. gate resistance (typ.) +vge=15v,-vge <= 15v, rg >= 6.8 ,tj <= 125c switching time vs. collector current (typ.) vcc=300v, vge=15v, rg=6.8 , tj= 25c vcc=300v, ic=400a, vge=15v, tj= 25c switching time vs. collector current (typ.) vcc=300v, vge=15v, rg=6.8 , tj=125c switching time vs. gate resistance (typ.) vcc=300v, ic=400a, vge=15v, tj= 125c reverse bias safe operating area (max.) 10 100 1000 10000 0 200 400 600 800 switching time : ton, tr, toff, tf [ nsec ] collector current : ic [ a ] tr tf toff ton 10 100 1000 10000 0 200 400 600 800 switching time : ton, tr, toff, tf [ nsec ] collector current : ic [ a ] tr tf toff ton 10 100 1000 10000 1.0 10.0 100.0 switching time : ton, tr, toff, tf [ nsec ] gate resistance : rg [ ? ] t r tf toff ton 0 10 20 30 40 0 200 400 600 800 switching loss : eon, eoff, err [ mj/pulse ] collector current : ic [ a ] eon(125c) eon(25c) eoff(125c) err(125c) err(25c) eoff(25c) 0 10 20 30 40 50 60 1.0 10.0 100.0 switching loss : eon, eoff, err [ mj/pulse ] gate resistance : rg [ ? ] eoff err eon 0 200 400 600 800 1000 0 200 400 600 800 collector current : ic [ a ] collector - emitter voltage : vce [ v ]
2MBI400U2B-060 igbt module outline drawings, mm m233 transient thermal resistance (max.) reverse recovery characteristics (typ.) vcc=300v, vge=15v, rg=6.8 a forward current vs. forward on voltage (typ.) chip 0 200 400 600 800 1000 0.0 1.0 2.0 3.0 forward current : if [ a ] forward on voltage : vf [ v ] tj=125c tj=25c 10 100 1000 0 200 400 600 800 reverse recovery current : irr [ a ] reverse recover y time : trr [ nsec ] forward current : if [ a ] trr (125c) irr (125c) irr (25c) trr (25c) 0.001 0.010 0.100 1.000 0.001 0.010 0.100 1.000 thermal resistanse : rth(j-c) [c/w ] pulse width : pw [ sec ] fwd igbt 3-m5
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